 |
 |
 |
|
- INTRODUCTION
- 1. Nonpolar nitride materials and devices: Recent developments and present trends (T. Paskova)
- PART A: GROWTH
- 2. Nonpolar GaN films grown by HVPE (B. Haskell, P. Fini, S. Nakamura)
- 3. Nonpolar GaN quasi-wafers sliced from quasi-boules grown by high pressure solution and HVPE (I. Grzegory, M. Bochkowski, B. Lucnik, H. Teisseyre, C. Skierbiszewski, S. Porowski)
- 4. Heteroepitaxial growth of nonpolar AIN on SiC substrates by plasma-assisted molecular beam epitaxy (J. Suda)
- 5. MOVPE growth of AI(Ga, In)N on nonpolar/semipolar substrates (H. Amano)
- 6. GaN films and quantum wells with nonpolar surfaces: Growth and structural properties (O. Brandt)
- PART B: PROPERTIES
- 7. GaN films and quantum wells with nonpolar surfaces: Optical polarization properties (H. T. Grahn)
- 8. Luminescence properties of nonpolar GaN (P. P. Paskov, B. Monemar)
- 9. Optical phonons in GaN with nonpolar orientations: Anisotropic lattice distortion, phonon splitting, phonon deformation potentials and strain-free frequencies (V. Darakchieva, T. Paskova, M. Schubert)
- 10. Defects formed in nonpolar GaN grown on SiC and Al2O3: Structural perfection of laterally overgrown GaN layers (Z. Liliental-Weber, D. N. Zakharov)
- 11. Interfacial and defect structure of a-plane GaN grown on r-plane sapphire (R. Kroeger)
- PART C: NONPOLAR HETEROSTRUCTURES AND DEVICES
- 12. MOCVD grown nonpolar nitride heterostructures and devices (A. Chakraborty, U. Mishra)
- 13. MBE growth of nonpolar nitride low-dimensional structures (S. Founta, F. Rol, B. Gayral, B. Daudin)
- 14. Seminpolar InGaN/GaN quantum wells for highly functional light emitters (F. Funato, Y. Kowakami, Y. Narukawa, T. Mukai)
|
|
|
 |
|
 |
|
|
|
